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STP180NS04ZC
N-channel clamped 3.5 m - 120 A TO-220 fully protected SAFeFETTM Power MOSFET
Features
Type STP180NS04ZC

VDSS Clamped
RDS(on) max < 4.2 m
ID 120 A
Low capacitance and gate charge 100% avalanche tested 175C maximum junction temperature
1 3 2
TO-220
Applications
Switching application
Description
This fully clamped Power MOSFET is produced by using the latest advanced company's mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking P180NS04ZC Package TO-220 Packaging Tube
Order code STP180NS04ZC
April 2008
Rev 1
1/12
www.st.com 12
Contents
STP180NS04ZC
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP180NS04ZC
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VDG VGS ID (2) ID
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain gate current (continuous) Gate-source current (continuous) Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 33 (1) 33
(1) (1)
Unit V V V A A mA mA A W W/C kV kV kV C
20
120 120 50 50 480 300 2 8 8 8 -55 to 175
IDG IGS IDM (3) PTOT
VESD(G-S) VESD(G-D) VESD(D-S) TJ Tstg
Gate-source ESD (HBM-C=100 pF, R=1.5 k) Gate-drain ESD (HBM-C=100 pF, R=1.5 k) Drain-source ESD (HBM-C=100 pF, R=1.5 k) Operating junction temperature Storage temperature
1. Voltage is limited by zener diodes 2. Current limited by wire bonding 3. Pulse width limited by safe operating area
Table 3.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.50 62.5 300 Unit C/W C/W C
Table 4.
Symbol IAS
Avalanche data
Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax < 1%) Single pulse avalanche energy (starting Tj=25 C, ID=IAS, VDD=21 V) (see Figure 17, Figure 14.) Value 80 Unit A
EAS
1000
mJ
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Electrical characteristics
STP180NS04ZC
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DG VDSR(CL)
On/off states
Parameter Clamped voltage Drain-source clamping voltage (DC) Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate-source breakdown voltage Gate threshold voltage Static drain-source on resistance Internal gate resistor Test conditions ID = 1 mA, VGS = 0 -40 < Tj < 175 C IGS(CL) = -2 mA, ID = 1 A VDS = 16 V VDS = 16 V, Tj = 150 C VDS = 16 V, Tj = 175 C VGS = 10 V VGS = 10 V,Tj = 175 C VGS = 16 V,Tj = 175 C IGS = 100 A VDS = VGS, ID = 1 mA VGS = 10 V, ID = 40 A 18 2 3 3.5 14 Min. 33 41 1 50 100 2 50 150 25 4 4.2 Typ. Max. 41 Unit V V A A A A A A V V m
IDSS
IGSS (1)
VGSS VGS(th) RDS(on) RG
1. Gate Oxide, without zener diodes, tested at wafer sorting (IGSS < 100 nA @ 20 V Tj=25). Figure 17.: Unclamped Inductive load test circuit for electrical schematics
Table 6.
Symbol gfs (1) Ciss Coss Crss tr(Voff) tf tc Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Off voltage rise time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V, ID = 40 A Min. Typ. 95 4560 1700 550 250 115 290 110 29 40 Max. Unit S pF pF pF ns ns ns nC nC nC
VDS =25 V, f=1 MHz, VGS=0
VCLAMP=30 V, ID=80 A, VGS=10 V, RG=4.7 (see Figure 16) VDD=20 V, ID = 120 A VGS =10 V (see Figure 15)
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STP180NS04ZC
Electrical characteristics
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, VGS=0 ISD=120 A, di/dt = 100 A/s, VDD= 32 V, Tj=150 C (see Figure 16) 56 70 12 Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns nC A
VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 s, duty cycle 1.5%
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Electrical characteristics
STP180NS04ZC
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STP180NS04ZC Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized BVDSS vs temperature
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Test circuit
STP180NS04ZC
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Unclamped inductive waveform
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
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STP180NS04ZC
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP180NS04ZC
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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STP180NS04ZC
Revision history
5
Revision history
Table 8.
Date 03-Apr-2008
Document revision history
Revision 1 First release Changes
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STP180NS04ZC
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